2SK2765 PDF

Continous Drain Current. Pulsed Drain Current. I D puls. Avalanche Energy. Power Dissipation. P D

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Continous Drain Current. Pulsed Drain Current. I D puls. Avalanche Energy. Power Dissipation. P D Operating and Storage Temperature Range. T stg. Test conditions. Drain-Source Breakdown-Voltage. Gate Threshhold Voltage. V GS th. Zero Gate Voltage Drain Current. I DSS. Gate Source Leakage Current.

I GSS. Drain Source On-State Resistance. R DS on. Forward Transconductance. Input Capacitance. C iss. Output Capacitance. C oss. Reverse Transfer Capacitance. C rss. Avalanche Capability. Diode Forward On-Voltage.

Reverse Recovery Time. Reverse Recovery Charge. Thermal Resistance. R th ch-a. R th ch-c. Collmer Semiconductor - P. Box - Dallas TX - - Typical Output Characteristics. Drain-Source-On-State Resistance vs.

Typical Transfer Characteristics. Typical Forward Transconductance vs. Gate Threshold Voltage vs. Typical Capacitances vs. Avalanche Energy Derating. Forward Characteristics of Reverse Diode. Allowable Power Dissipation vs. Safe operation area. Transient Thermal impedance. This specification is subject to change without notice! Download 2SK Datasheet.

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